SIHD3N50D-BE3
Vishay Siliconix
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产品信息
参数信息
用户指南
| Mfr | Vishay Siliconix |
| Series | D |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Base Product Number | SIHD3 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 3.2Ohm @ 1.5A, 10V |
| Power Dissipation (Max) | 69W (Tc) |
| Supplier Device Package | TO-252AA |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 500 V |
| Input Capacitance (Ciss) (Max) @ Vds | 175 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
2000+日均询价数量
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15,000 ㎡库存仓库
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