SIGC109T120R3
Infineon Technologies
型号:
SIGC109T120R3
封装:
Die
批次:
-
数据手册:
-
描述:
INSULATED GATE BIPOLAR TRANSISTO
购买数量:
库存 : 471
最小起订量: 1 最小递增量: 1
数量
单价
28
10.3455
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产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | - |
| Package | Bulk |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Product Status | Active |
| Test Condition | - |
| Switching Energy | - |
| Base Product Number | SIGC109 |
| Td (on/off) @ 25°C | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | Die |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 100A |
| Current - Collector Pulsed (Icm) | 300 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
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