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SIDR626LDP-T1-RE3

Vishay Siliconix

型号:

SIDR626LDP-T1-RE3

封装:

PowerPAK® SO-8DC

批次:

-

数据手册:

-

描述:

MOSFET N-CH 60V 45.6A/2.4A PPAK

购买数量:

库存 : 11811

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    2.774

  • 10

    2.30755

  • 100

    1.836825

  • 500

    1.5542

  • 1000

    1.318714

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产品信息

参数信息
用户指南
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Base Product Number SIDR626
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 1.5mOhm @ 20A, 10V
Power Dissipation (Max) 6.25W (Ta), 125W (Tc)
Supplier Device Package PowerPAK® SO-8DC
Gate Charge (Qg) (Max) @ Vgs 135 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 5900 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 45.6A (Ta), 2.4A (Tc)