SIDR5102EP-T1-RE3
Vishay Siliconix
型号:
SIDR5102EP-T1-RE3
品牌:
封装:
PowerPAK® SO-8DC
批次:
-
数据手册:
描述:
N-CHANNEL 100 V (D-S) 175C MOSFE
购买数量:
库存 : 请查询
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产品信息
参数信息
用户指南
| Mfr | Vishay Siliconix |
| Series | TrenchFET® Gen V |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Base Product Number | SIDR5102 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 4.1mOhm @ 20A, 10V |
| Power Dissipation (Max) | 7.5W (Ta), 150W (Tc) |
| Supplier Device Package | PowerPAK® SO-8DC |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2850 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 28.2A (Ta), 126A (Tc) |
2000+日均询价数量
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