SIDC09D60E6YX1SA1
Infineon Technologies
型号:
SIDC09D60E6YX1SA1
封装:
Sawn on foil
批次:
-
数据手册:
描述:
DIODE GP 600V 20A WAFER
购买数量:
库存 : 请查询
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产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Series | - |
| Package | Bulk |
| Technology | Standard |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Product Status | Obsolete |
| Base Product Number | SIDC09D60 |
| Capacitance @ Vr, F | - |
| Supplier Device Package | Sawn on foil |
| Reverse Recovery Time (trr) | 150 ns |
| Current - Reverse Leakage @ Vr | 27 µA @ 600 V |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Current - Average Rectified (Io) | 20A |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 20 A |
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