SI4925BDY-T1-GE3

Vishay Siliconix

型号:

SI4925BDY-T1-GE3

封装:

8-SOIC

批次:

-

数据手册:

描述:

MOSFET 2P-CH 30V 5.3A 8-SOIC

购买数量:

库存 : 2500

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    1.558

  • 10

    1.3984

  • 100

    1.12404

  • 500

    0.923514

  • 1000

    0.765206

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产品信息

参数信息
用户指南
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Technology MOSFET (Metal Oxide)
FET Feature Logic Level Gate
Power - Max 1.1W
Configuration 2 P-Channel (Dual)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Base Product Number SI4925
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 25mOhm @ 7.1A, 10V
Supplier Device Package 8-SOIC
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Drain to Source Voltage (Vdss) 30V
Input Capacitance (Ciss) (Max) @ Vds -
Current - Continuous Drain (Id) @ 25°C 5.3A