SI4190BDY-T1-GE3
Vishay Siliconix
型号:
SI4190BDY-T1-GE3
品牌:
封装:
8-SOIC
批次:
-
数据手册:
描述:
N-CHANNEL 100 V (D-S) MOSFET SO-
购买数量:
库存 : 请查询
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产品信息
参数信息
用户指南
| Mfr | Vishay Siliconix |
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Base Product Number | SI4190 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 9.3mOhm @ 10A, 10V |
| Power Dissipation (Max) | 3.8W (Ta), 8.4W (Tc) |
| Supplier Device Package | 8-SOIC |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4150 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 17A (Tc) |
2000+日均询价数量
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