SI4103DY-T1-GE3
Vishay Siliconix
库存 : 4900
最小起订量: 1 最小递增量: 1
数量
单价
1
0.703
10
0.61085
100
0.42275
500
0.353191
1000
0.30059
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产品信息
参数信息
用户指南
| Mfr | Vishay Siliconix |
| Series | TrenchFET® Gen III |
| Package | Tape & Reel (TR) |
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Base Product Number | SI4103 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 7.9mOhm @ 10A, 10V |
| Power Dissipation (Max) | 2.5W (Ta), 5.2W (Tc) |
| Supplier Device Package | 8-SO |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5200 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 16A (Tc) |
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