SI3475DV-T1-E3
Vishay Siliconix
型号:
SI3475DV-T1-E3
品牌:
封装:
6-TSOP
批次:
-
数据手册:
描述:
MOSFET P-CH 200V 950MA 6TSOP
购买数量:
库存 : 请查询
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产品信息
参数信息
用户指南
| Mfr | Vishay Siliconix |
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Base Product Number | SI3475 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1.61Ohm @ 900mA, 10V |
| Power Dissipation (Max) | 2W (Ta), 3.2W (Tc) |
| Supplier Device Package | 6-TSOP |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 950mA (Tc) |
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