SI2392BDS-T1-GE3

Vishay Siliconix

型号:

SI2392BDS-T1-GE3

封装:

SOT-23-3 (TO-236)

批次:

-

数据手册:

描述:

N-CHANNEL 100-V (D-S) MOSFET SOT

购买数量:

库存 : 11803

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    0.5795

  • 10

    0.49685

  • 100

    0.345515

  • 500

    0.269762

  • 1000

    0.21927

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产品信息

参数信息
用户指南
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Base Product Number SI2392
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 52mOhm @ 10A, 10V
Power Dissipation (Max) 1.25W (Ta), 1.7W (Tc)
Supplier Device Package SOT-23-3 (TO-236)
Gate Charge (Qg) (Max) @ Vgs 7.1 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 290 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 2A (Ta), 2.3A (Tc)