SI2309DS-T1-E3

Vishay Siliconix

型号:

SI2309DS-T1-E3

封装:

SOT-23-3 (TO-236)

批次:

-

数据手册:

描述:

MOSFET P-CH 60V 1.25A SOT23-3

购买数量:

库存 : 请查询

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产品信息

参数信息
用户指南
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
FET Type P-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Product Status Obsolete
Vgs(th) (Max) @ Id 1V @ 250µA (Min)
Base Product Number SI2309
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 340mOhm @ 1.25A, 10V
Power Dissipation (Max) 1.25W (Ta)
Supplier Device Package SOT-23-3 (TO-236)
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 1.25A (Ta)