SI2309CDS-T1-GE3

Vishay Siliconix

型号:

SI2309CDS-T1-GE3

封装:

SOT-23-3 (TO-236)

批次:

-

数据手册:

描述:

MOSFET P-CH 60V 1.6A SOT23-3

购买数量:

库存 : 6466

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    0.5035

  • 10

    0.4313

  • 100

    0.32243

  • 500

    0.253308

  • 1000

    0.195738

请发送询价,我们将立即回复。

Certif02 Certif07 Certif03

产品信息

参数信息
用户指南
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
FET Type P-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Base Product Number SI2309
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 345mOhm @ 1.25A, 10V
Power Dissipation (Max) 1W (Ta), 1.7W (Tc)
Supplier Device Package SOT-23-3 (TO-236)
Gate Charge (Qg) (Max) @ Vgs 4.1 nC @ 4.5 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 210 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 1.6A (Tc)