SEG10FG-M3/I

Vishay General Semiconductor - Diodes Division

型号:

SEG10FG-M3/I

封装:

DO-219AB (SMF)

批次:

-

数据手册:

描述:

DIODE GEN PURP 400V 1A DO219AB

购买数量:

库存 : 10000

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    0.361

  • 10

    0.2527

  • 100

    0.127585

  • 500

    0.104101

  • 1000

    0.077235

  • 2000

    0.06498

  • 5000

    0.06213

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产品信息

参数信息
用户指南
Mfr Vishay General Semiconductor - Diodes Division
Speed Standard Recovery >500ns, > 200mA (Io)
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
Technology Standard
Mounting Type Surface Mount
Package / Case DO-219AB
Product Status Active
Capacitance @ Vr, F 7.3pF @ 4V, 1MHz
Supplier Device Package DO-219AB (SMF)
Reverse Recovery Time (trr) 1.2 µs
Current - Reverse Leakage @ Vr 5 µA @ 400 V
Voltage - DC Reverse (Vr) (Max) 400 V
Current - Average Rectified (Io) 1A
Operating Temperature - Junction -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 700 mA