SCTWA30N120

STMicroelectronics

型号:

SCTWA30N120

品牌:

封装:

HiP247™ Long Leads

批次:

数据手册:

描述:

IC POWER MOSFET 1200V HIP247

购买数量:

库存 : 414

最小起订量: 1 最小递增量: 1

数量

单价

请发送询价，我们将立即回复。

参数信息

用户指南

Mfr	STMicroelectronics
Series	-
Package	Tube
FET Type	N-Channel
Vgs (Max)	+25V, -10V
Technology	SiCFET (Silicon Carbide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-247-3
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 1mA (Typ)
Base Product Number	SCTWA30
Operating Temperature	-55°C ~ 200°C (TJ)
Rds On (Max) @ Id, Vgs	100mOhm @ 20A, 20V
Power Dissipation (Max)	270W (Tc)
Supplier Device Package	HiP247™ Long Leads
Gate Charge (Qg) (Max) @ Vgs	105 nC @ 20 V
Drain to Source Voltage (Vdss)	1200 V
Input Capacitance (Ciss) (Max) @ Vds	1700 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On)	20V
Current - Continuous Drain (Id) @ 25°C	45A (Tc)