SCTWA20N120

STMicroelectronics

型号:

SCTWA20N120

封装:

HiP247™ Long Leads

批次:

-

数据手册:

描述:

IC POWER MOSFET 1200V HIP247

购买数量:

库存 : 546

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    17.404

  • 10

    15.99135

  • 25

    15.32844

  • 100

    13.505485

  • 250

    12.84267

  • 500

    12.014118

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产品信息

参数信息
用户指南
Mfr STMicroelectronics
Series -
Package Tube
FET Type N-Channel
Vgs (Max) +25V, -10V
Technology SiCFET (Silicon Carbide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-247-3
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 1mA (Typ)
Base Product Number SCTWA20
Operating Temperature -55°C ~ 200°C (TJ)
Rds On (Max) @ Id, Vgs 239mOhm @ 10A, 20V
Power Dissipation (Max) 175W (Tc)
Supplier Device Package HiP247™ Long Leads
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 20 V
Drain to Source Voltage (Vdss) 1200 V
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On) 20V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)