SCTW60N120G2
STMicroelectronics
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产品信息
参数信息
用户指南
| Mfr | STMicroelectronics |
| Series | - |
| Package | Bulk |
| FET Type | N-Channel |
| Vgs (Max) | +18V, -5V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Base Product Number | SCTW60 |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 30A, 18V |
| Power Dissipation (Max) | 389W (Tc) |
| Supplier Device Package | HiP247™ |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 8 V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1969 pF @ 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
2000+日均询价数量
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15,000 ㎡库存仓库
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