SCT3120ALGC11

Rohm Semiconductor

型号:

SCT3120ALGC11

品牌:

封装:

TO-247N

批次:

数据手册:

描述:

SICFET N-CH 650V 21A TO247N

购买数量:

库存 : 2746

最小起订量: 1 最小递增量: 1

数量

单价

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参数信息

用户指南

Mfr	Rohm Semiconductor
Series	-
Package	Tube
FET Type	N-Channel
Vgs (Max)	+22V, -4V
Technology	SiCFET (Silicon Carbide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-247-3
Product Status	Active
Vgs(th) (Max) @ Id	5.6V @ 3.33mA
Base Product Number	SCT3120
Operating Temperature	175°C (TJ)
Rds On (Max) @ Id, Vgs	156mOhm @ 6.7A, 18V
Power Dissipation (Max)	103W (Tc)
Supplier Device Package	TO-247N
Gate Charge (Qg) (Max) @ Vgs	38 nC @ 18 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	460 pF @ 500 V
Drive Voltage (Max Rds On, Min Rds On)	18V
Current - Continuous Drain (Id) @ 25°C	21A (Tc)