SCT2120AFC
Rohm Semiconductor
型号:
SCT2120AFC
封装:
TO-220AB
批次:
-
数据手册:
描述:
SICFET N-CH 650V 29A TO220AB
购买数量:
库存 : 请查询
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产品信息
参数信息
用户指南
| Mfr | Rohm Semiconductor |
| Series | - |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | +22V, -6V |
| Technology | SiCFET (Silicon Carbide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 4V @ 3.3mA |
| Base Product Number | SCT2120 |
| Operating Temperature | 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 156mOhm @ 10A, 18V |
| Power Dissipation (Max) | 165W (Tc) |
| Supplier Device Package | TO-220AB |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 18 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
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