RV4E031RPHZGTCR1

Rohm Semiconductor

型号:

RV4E031RPHZGTCR1

封装:

DFN1616-6W

批次:

-

数据手册:

描述:

MOSFET P-CH 30V 3.1A DFN1616-6W

购买数量:

库存 : 5852

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    0.76

  • 10

    0.65835

  • 100

    0.455525

  • 500

    0.380608

  • 1000

    0.323931

请发送询价,我们将立即回复。

Certif02 Certif07 Certif03

产品信息

参数信息
用户指南
Mfr Rohm Semiconductor
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
FET Type P-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount, Wettable Flank
Package / Case 6-PowerWFDFN
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 1mA
Base Product Number RV4E031
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 105mOhm @ 3.1A, 10V
Power Dissipation (Max) 1.5W (Ta)
Supplier Device Package DFN1616-6W
Gate Charge (Qg) (Max) @ Vgs 4.8 nC @ 5 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 460 pF @ 10 V
Current - Continuous Drain (Id) @ 25°C 3.1A (Ta)