RSJ10HN06TL
Rohm Semiconductor
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产品信息
参数信息
用户指南
| Mfr | Rohm Semiconductor |
| Series | - |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Base Product Number | RSJ10 |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 50A, 10V |
| Power Dissipation (Max) | 100W (Tc) |
| Supplier Device Package | LPTS |
| Gate Charge (Qg) (Max) @ Vgs | 202 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11000 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Ta) |
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