RS6N120BHTB1

Rohm Semiconductor

型号:

RS6N120BHTB1

封装:

8-HSOP

批次:

-

数据手册:

描述:

NCH 80V 135A, HSOP8, POWER MOSFE

购买数量:

库存 : 2458

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    2.6885

  • 10

    2.2306

  • 100

    1.775645

  • 500

    1.502425

  • 1000

    1.274796

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产品信息

参数信息
用户指南
Mfr Rohm Semiconductor
Series -
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1mA
Base Product Number RS6N120
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 4.9mOhm @ 60A, 6V
Power Dissipation (Max) 3W (Ta), 104W (Tc)
Supplier Device Package 8-HSOP
Gate Charge (Qg) (Max) @ Vgs 53 nC @ 10 V
Drain to Source Voltage (Vdss) 80 V
Input Capacitance (Ciss) (Max) @ Vds 3420 pF @ 40 V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Current - Continuous Drain (Id) @ 25°C 135A (Ta), 120A (Tc)