RS6G120BGTB1
Rohm Semiconductor
型号:
RS6G120BGTB1
封装:
8-HSOP
批次:
-
数据手册:
描述:
NCH 40V 210A, HSOP8, POWER MOSFE
购买数量:
库存 : 2105
最小起订量: 1 最小递增量: 1
数量
单价
1
3.2585
10
2.73885
100
2.215875
500
1.969654
1000
1.686526
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Mfr | Rohm Semiconductor |
| Series | - |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Base Product Number | RS6G |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1.34mOhm @ 90A, 10V |
| Power Dissipation (Max) | 104W (Ta) |
| Supplier Device Package | 8-HSOP |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 40 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4240 pF @ 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Ta) |
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