Rohm Semiconductor
型号:
RQ3L090GNTB
封装:
8-HSMT (3.2x3)
批次:
-
数据手册:
-
描述:
MOSFET N-CH 60V 9A/30A 8HSMT
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
1.349
10
1.1039
100
0.858325
500
0.727567
1000
0.592686
请发送询价,我们将立即回复。

| Mfr | Rohm Semiconductor |
| Series | - |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.7V @ 300µA |
| Base Product Number | RQ3L090 |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 13.9mOhm @ 9A, 10V |
| Power Dissipation (Max) | 2W (Ta) |
| Supplier Device Package | 8-HSMT (3.2x3) |
| Gate Charge (Qg) (Max) @ Vgs | 24.5 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1260 pF @ 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 30A (Tc) |