RN1107MFV,L3F(CT
Toshiba Semiconductor and Storage
型号:
RN1107MFV,L3F(CT
封装:
VESM
批次:
-
数据手册:
-
描述:
TRANS PREBIAS NPN 50V 0.1A VESM
购买数量:
库存 : 15769
最小起订量: 1 最小递增量: 1
数量
单价
1
0.1615
10
0.1178
100
0.063365
500
0.049742
1000
0.034542
2000
0.028614
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Package | Tape & Reel (TR) |
| Power - Max | 150 mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-723 |
| Product Status | Active |
| Transistor Type | NPN - Pre-Biased |
| Base Product Number | RN1107 |
| Resistor - Base (R1) | 10 kOhms |
| Supplier Device Package | VESM |
| Resistor - Emitter Base (R2) | 47 kOhms |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA |
| Current - Collector (Ic) (Max) | 100 mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
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