RJK1001DPN-E0#T2

Renesas Electronics America Inc

型号:

RJK1001DPN-E0#T2

封装:

TO-220AB

批次:

-

数据手册:

-

描述:

MOSFET N-CH 100V 80A TO220AB

购买数量:

库存 : 3507

最小起订量: 1 最小递增量: 1

数量

单价

  • 78

    3.6575

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产品信息

参数信息
用户指南
Mfr Renesas Electronics America Inc
Series -
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Obsolete
Vgs(th) (Max) @ Id -
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 5.5mOhm @ 40A, 10V
Power Dissipation (Max) 200W (Tc)
Supplier Device Package TO-220AB
Gate Charge (Qg) (Max) @ Vgs 147 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 10 pF @ 10 V
Current - Continuous Drain (Id) @ 25°C 80A (Ta)