RGT8NS65DGC9
Rohm Semiconductor
型号:
RGT8NS65DGC9
封装:
TO-262
批次:
-
数据手册:
-
描述:
IGBT TRENCH FIELD 650V 8A TO262
购买数量:
库存 : 965
最小起订量: 1 最小递增量: 1
数量
单价
1
1.995
10
1.65965
100
1.320975
500
1.117713
1000
0.948366
2000
0.900952
5000
0.867084
10000
0.838375
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产品信息
参数信息
用户指南
| Mfr | Rohm Semiconductor |
| Series | - |
| Package | Tube |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Gate Charge | 13.5 nC |
| Power - Max | 65 W |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Product Status | Active |
| Test Condition | 400V, 4A, 50Ohm, 15V |
| Switching Energy | - |
| Base Product Number | RGT8NS65 |
| Td (on/off) @ 25°C | 17ns/69ns |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Supplier Device Package | TO-262 |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 4A |
| Reverse Recovery Time (trr) | 40 ns |
| Current - Collector (Ic) (Max) | 8 A |
| Current - Collector Pulsed (Icm) | 12 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
2000+日均询价数量
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15,000 ㎡库存仓库
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