RFN10BGE3STL
Rohm Semiconductor
型号:
RFN10BGE3STL
封装:
TO-252GE
批次:
-
数据手册:
-
描述:
DIODE GEN PURP 350V 10A TO252GE
购买数量:
库存 : 90
最小起订量: 1 最小递增量: 1
数量
单价
1
1.064
10
0.8702
100
0.677065
500
0.573857
1000
0.467466
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Mfr | Rohm Semiconductor |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Series | - |
| Package | Tape & Reel (TR) |
| Technology | Standard |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Product Status | Active |
| Base Product Number | RFN10 |
| Capacitance @ Vr, F | - |
| Supplier Device Package | TO-252GE |
| Reverse Recovery Time (trr) | 30 ns |
| Current - Reverse Leakage @ Vr | 10 µA @ 350 V |
| Voltage - DC Reverse (Vr) (Max) | 350 V |
| Current - Average Rectified (Io) | 10A |
| Operating Temperature - Junction | 150°C |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 10 A |
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