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RF4E080BNTR
Rohm Semiconductor
型号:
RF4E080BNTR
封装:
HUML2020L8
批次:
-
数据手册:
描述:
MOSFET N-CH 30V 8A HUML2020L8
购买数量:
库存 : 2108
最小起订量: 1 最小递增量: 1
数量
单价
1
0.6745
10
0.59565
100
0.45638
500
0.360772
1000
0.28862
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Mfr | Rohm Semiconductor |
| Series | - |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerUDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Base Product Number | RF4E080 |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 17.6mOhm @ 8A, 10V |
| Power Dissipation (Max) | 2W (Ta) |
| Supplier Device Package | HUML2020L8 |
| Gate Charge (Qg) (Max) @ Vgs | 14.5 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
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