RF1S4N100SM9A
Harris Corporation
型号:
RF1S4N100SM9A
封装:
TO-263AB
批次:
-
数据手册:
-
描述:
MOSFET N-CH 1000V 4.3A TO263AB
购买数量:
库存 : 187
最小起订量: 1 最小递增量: 1
数量
单价
89
3.2205
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产品信息
参数信息
用户指南
| Mfr | Harris Corporation |
| Series | - |
| Package | Bulk |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 3.5Ohm @ 2.5A, 10V |
| Power Dissipation (Max) | 150W (Tc) |
| Supplier Device Package | TO-263AB |
| Drain to Source Voltage (Vdss) | 1000 V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
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