RD3P01BATTL1
Rohm Semiconductor
型号:
RD3P01BATTL1
封装:
TO-252
批次:
-
数据手册:
描述:
PCH -100V -10A POWER MOSFET: RD3
购买数量:
库存 : 2448
最小起订量: 1 最小递增量: 1
数量
单价
1
1.121
10
0.9196
100
0.71535
500
0.606309
1000
0.493905
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产品信息
参数信息
用户指南
| Mfr | Rohm Semiconductor |
| Series | - |
| Package | Tape & Reel (TR) |
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Base Product Number | RD3P01 |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 5A, 10V |
| Power Dissipation (Max) | 25W (Ta) |
| Supplier Device Package | TO-252 |
| Gate Charge (Qg) (Max) @ Vgs | 19.4 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
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