Rohm Semiconductor
型号:
RD3G03BBGTL1
封装:
TO-252
批次:
-
数据手册:
-
描述:
NCH 40V 65A, TO-252, POWER MOSFE
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
1.4535
10
1.2084
100
0.961685
500
0.813751
1000
0.69046
请发送询价,我们将立即回复。
Mfr | Rohm Semiconductor |
Series | - |
Package | Tape & Reel (TR) |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Operating Temperature | 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 6.5mOhm @ 35A, 10V |
Power Dissipation (Max) | 50W (Tc) |
Supplier Device Package | TO-252 |
Gate Charge (Qg) (Max) @ Vgs | 18.2 nC @ 10 V |
Drain to Source Voltage (Vdss) | 40 V |
Input Capacitance (Ciss) (Max) @ Vds | 1170 pF @ 20 V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |