QS8J11TCR
Rohm Semiconductor
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产品信息
参数信息
用户指南
| Mfr | Rohm Semiconductor |
| Series | - |
| Package | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Logic Level Gate, 1.5V Drive |
| Power - Max | 550mW |
| Configuration | 2 P-Channel (Dual) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SMD, Flat Lead |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Base Product Number | QS8J11 |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 43mOhm @ 3.5A, 4.5V |
| Supplier Device Package | TSMT8 |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 12V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600pF @ 6V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A |
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