PHU11NQ10T,127
NXP USA Inc.
库存 : 请查询
请发送RFQ，我们将立即回复。
产品信息
参数信息
用户指南
| Mfr | NXP USA Inc. |
| Series | TrenchMOS™ |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Base Product Number | PHU11 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 9A, 10V |
| Power Dissipation (Max) | 57.7W (Tc) |
| Supplier Device Package | I-Pak |
| Gate Charge (Qg) (Max) @ Vgs | 14.7 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 10.9A (Tc) |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
快速链接
