PHD18NQ10T,118
NXP USA Inc.
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产品信息
参数信息
用户指南
| Mfr | NXP USA Inc. |
| Series | TrenchMOS™ |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Base Product Number | PHD18 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 9A, 10V |
| Power Dissipation (Max) | 79W (Tc) |
| Supplier Device Package | DPAK |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 633 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
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