PDTD123ET,215
NXP Semiconductors
型号:
PDTD123ET,215
封装:
TO-236AB
批次:
-
数据手册:
-
描述:
SMALL SIGNAL BIPOLAR TRANSISTOR,
购买数量:
库存 : 请查询
请发送RFQ，我们将立即回复。
产品信息
参数信息
用户指南
| Mfr | NXP Semiconductors |
| Series | PDTD123E |
| Package | Bulk |
| Power - Max | 250 mW |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Product Status | Active |
| Transistor Type | NPN - Pre-Biased |
| Resistor - Base (R1) | 2.2 kOhms |
| Supplier Device Package | TO-236AB |
| Resistor - Emitter Base (R2) | 2.2 kOhms |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector (Ic) (Max) | 500 mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 50mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
快速链接
