PDTC123EMB,315

NXP Semiconductors

型号:

PDTC123EMB,315

封装:

DFN1006B-3

批次:

-

数据手册:

描述:

NOW NEXPERIA PDTC123EMB - SMALL

购买数量:

库存 : 请查询

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产品信息

参数信息
用户指南
Mfr NXP Semiconductors
Series -
Package Bulk
Power - Max 250 mW
Mounting Type Surface Mount
Package / Case 3-XFDFN
Product Status Active
Transistor Type NPN - Pre-Biased
Base Product Number PDTC123
Resistor - Base (R1) 2.2 kOhms
Frequency - Transition 230 MHz
Supplier Device Package DFN1006B-3
Resistor - Emitter Base (R2) 2.2 kOhms
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA
Current - Collector (Ic) (Max) 100 mA
Current - Collector Cutoff (Max) 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 20mA, 5V
Voltage - Collector Emitter Breakdown (Max) 50 V