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PDTC115ES,126
NXP USA Inc.
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产品信息
参数信息
用户指南
| Mfr | NXP USA Inc. |
| Series | - |
| Package | Tape & Box (TB) |
| Power - Max | 500 mW |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Product Status | Obsolete |
| Transistor Type | NPN - Pre-Biased |
| Base Product Number | PDTC115 |
| Resistor - Base (R1) | 100 kOhms |
| Supplier Device Package | TO-92-3 |
| Resistor - Emitter Base (R2) | 100 kOhms |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
| Current - Collector (Ic) (Max) | 20 mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
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