PDTC115EMB,315
NXP Semiconductors
型号:
PDTC115EMB,315
封装:
DFN1006B-3
批次:
-
数据手册:
描述:
PDTC115E - NPN RESISTOR-EQUIPPED
购买数量:
库存 : 189658
最小起订量: 1 最小递增量: 1
数量
单价
11225
0.0285
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产品信息
参数信息
用户指南
| Mfr | NXP Semiconductors |
| Series | - |
| Package | Bulk |
| Power - Max | 250 mW |
| Mounting Type | Surface Mount |
| Package / Case | SC-101, SOT-883 |
| Product Status | Active |
| Transistor Type | NPN - Pre-Biased |
| Base Product Number | PDTC115 |
| Resistor - Base (R1) | 100 kOhms |
| Frequency - Transition | 230 MHz |
| Supplier Device Package | DFN1006B-3 |
| Resistor - Emitter Base (R2) | 100 kOhms |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
| Current - Collector (Ic) (Max) | 20 mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
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