PDTB114ETR
NXP Semiconductors
型号:
PDTB114ETR
封装:
TO-236AB
批次:
-
数据手册:
描述:
PDTB114ET - 500 MA, 50 V PNP RES
购买数量:
库存 : 请查询
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产品信息
参数信息
用户指南
| Mfr | NXP Semiconductors |
| Series | - |
| Package | Bulk |
| Power - Max | 320 mW |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Product Status | Obsolete |
| Transistor Type | PNP - Pre-Biased |
| Base Product Number | PDTB114 |
| Resistor - Base (R1) | 10 kOhms |
| Frequency - Transition | 140 MHz |
| Supplier Device Package | TO-236AB |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 2.5mA, 50mA |
| Current - Collector (Ic) (Max) | 500 mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 50mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
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