NXH010P120MNF1PG
onsemi
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产品信息
参数信息
用户指南
| Mfr | onsemi |
| Series | - |
| Package | Tray |
| Technology | Silicon Carbide (SiC) |
| FET Feature | - |
| Power - Max | 250W (Tj) |
| Configuration | 2 N-Channel (Dual) Common Source |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4.3V @ 40mA |
| Base Product Number | NXH010 |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 100A, 20V |
| Supplier Device Package | - |
| Gate Charge (Qg) (Max) @ Vgs | 454nC @ 20V |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Input Capacitance (Ciss) (Max) @ Vds | 4707pF @ 800V |
| Current - Continuous Drain (Id) @ 25°C | 114A (Tc) |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
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