NTH4L025N065SC1

onsemi

型号:

NTH4L025N065SC1

品牌:

封装:

TO-247-4L

批次:

数据手册:

描述:

SILICON CARBIDE (SIC) MOSFET - 1

购买数量:

库存 : 409

最小起订量: 1 最小递增量: 1

数量

单价

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参数信息

用户指南

Mfr	onsemi
Series	-
Package	Tube
FET Type	N-Channel
Vgs (Max)	+22V, -8V
Technology	SiCFET (Silicon Carbide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-247-4
Product Status	Active
Vgs(th) (Max) @ Id	4.3V @ 15.5mA
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	28.5mOhm @ 45A, 18V
Power Dissipation (Max)	348W (Tc)
Supplier Device Package	TO-247-4L
Gate Charge (Qg) (Max) @ Vgs	164 nC @ 18 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	3480 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Current - Continuous Drain (Id) @ 25°C	99A (Tc)