MURT30060
GeneSiC Semiconductor
型号:
MURT30060
封装:
Three Tower
批次:
-
数据手册:
描述:
DIODE MODULE 600V 150A 3TOWER
购买数量:
库存 : 请查询
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产品信息
参数信息
用户指南
| Mfr | GeneSiC Semiconductor |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Series | - |
| Package | Bulk |
| Technology | Standard |
| Mounting Type | Chassis Mount |
| Package / Case | Three Tower |
| Product Status | Active |
| Diode Configuration | 1 Pair Common Cathode |
| Supplier Device Package | Three Tower |
| Reverse Recovery Time (trr) | 200 ns |
| Current - Reverse Leakage @ Vr | 25 µA @ 50 V |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 150 A |
| Current - Average Rectified (Io) (per Diode) | 150A |
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