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MSE1PJ-M3/I
Vishay General Semiconductor - Diodes Division
型号:
MSE1PJ-M3/I
封装:
MicroSMP (DO-219AD)
批次:
-
数据手册:
描述:
DIODE GEN PURP 600V 1A MICROSMP
购买数量:
库存 : 请查询
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产品信息
参数信息
用户指南
| Mfr | Vishay General Semiconductor - Diodes Division |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Series | Automotive, AEC-Q101 |
| Package | Tape & Reel (TR) |
| Technology | Standard |
| Mounting Type | Surface Mount |
| Package / Case | MicroSMP |
| Product Status | Active |
| Capacitance @ Vr, F | 5pF @ 4V, 1MHz |
| Supplier Device Package | MicroSMP (DO-219AD) |
| Reverse Recovery Time (trr) | 780 ns |
| Current - Reverse Leakage @ Vr | 1 µA @ 600 V |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Current - Average Rectified (Io) | 1A |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 1 A |
2000+日均询价数量
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15,000 ㎡库存仓库
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