MSE1PBHM3/I

Vishay General Semiconductor - Diodes Division

型号:

MSE1PBHM3/I

封装:

MicroSMP (DO-219AD)

批次:

-

数据手册:

描述:

DIODE GEN PURP 100V 1A MICROSMP

购买数量:

库存 : 15360

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    1.4155

  • 10

    1.15805

  • 100

    0.900505

  • 500

    0.763268

  • 1000

    0.621766

  • 2000

    0.585314

  • 5000

    0.557441

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产品信息

参数信息
用户指南
Mfr Vishay General Semiconductor - Diodes Division
Speed Standard Recovery >500ns, > 200mA (Io)
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
Technology Standard
Mounting Type Surface Mount
Package / Case MicroSMP
Product Status Active
Capacitance @ Vr, F 5pF @ 4V, 1MHz
Supplier Device Package MicroSMP (DO-219AD)
Reverse Recovery Time (trr) 780 ns
Current - Reverse Leakage @ Vr 1 µA @ 100 V
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 1A
Operating Temperature - Junction -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A