MSCSM170HRM11NG
Microchip Technology
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产品信息
参数信息
用户指南
| Mfr | Microchip Technology |
| Series | - |
| Package | Bulk |
| Technology | Silicon Carbide (SiC) |
| FET Feature | Silicon Carbide (SiC) |
| Power - Max | 1.012kW (Tc), 662W (Tc) |
| Configuration | 4 N-Channel (Three Level Inverter) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.2V @ 10mA, 2.8V @ 6mA |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 11.3mOhm @ 120A, 20V, 16mOhm @ 80A, 20V |
| Supplier Device Package | - |
| Gate Charge (Qg) (Max) @ Vgs | 712nC @ 20V, 464nC @ 20V |
| Drain to Source Voltage (Vdss) | 1700V (1.7kV), 1200V (1.2kV) |
| Input Capacitance (Ciss) (Max) @ Vds | 13200pF @ 1000V, 6040pF @ 1000V |
| Current - Continuous Drain (Id) @ 25°C | 226A (Tc), 163A (Tc) |
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