Microchip Technology
型号:
MSCSM120TLM11CAG
封装:
SP6C
批次:
-
数据手册:
-
描述:
PM-MOSFET-SIC-SBD-SP6C
购买数量:
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Mfr | Microchip Technology |
Series | - |
Package | Bulk |
Technology | Silicon Carbide (SiC) |
FET Feature | - |
Power - Max | 1042W (Tc) |
Configuration | 4 N-Channel (Three Level Inverter) |
Mounting Type | Chassis Mount |
Package / Case | Module |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.8V @ 3mA |
Base Product Number | MSCSM120 |
Operating Temperature | -40°C ~ 175°C (TJ) |
Rds On (Max) @ Id, Vgs | 10.4mOhm @ 120A, 20V |
Supplier Device Package | SP6C |
Gate Charge (Qg) (Max) @ Vgs | 696nC @ 20V |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Input Capacitance (Ciss) (Max) @ Vds | 9000pF @ 1000V |
Current - Continuous Drain (Id) @ 25°C | 251A (Tc) |