MBR600150CT
GeneSiC Semiconductor
型号:
MBR600150CT
封装:
Twin Tower
批次:
-
数据手册:
描述:
DIODE SCHOTTKY 150V 300A 2 TOWER
购买数量:
库存 : 请查询
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产品信息
参数信息
用户指南
| Mfr | GeneSiC Semiconductor |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Series | - |
| Package | Bulk |
| Technology | Schottky |
| Mounting Type | Chassis Mount |
| Package / Case | Twin Tower |
| Product Status | Active |
| Base Product Number | MBR600150 |
| Diode Configuration | 1 Pair Common Cathode |
| Supplier Device Package | Twin Tower |
| Current - Reverse Leakage @ Vr | 3 mA @ 150 V |
| Voltage - DC Reverse (Vr) (Max) | 150 V |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - Forward (Vf) (Max) @ If | 880 mV @ 300 A |
| Current - Average Rectified (Io) (per Diode) | 300A |
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