MBR40035CTR
GeneSiC Semiconductor
型号:
MBR40035CTR
封装:
Twin Tower
批次:
-
数据手册:
描述:
DIODE MODULE 35V 200A 2TOWER
购买数量:
库存 : 1
最小起订量: 1 最小递增量: 1
数量
单价
1
97.812
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产品信息
参数信息
用户指南
| Mfr | GeneSiC Semiconductor |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Series | - |
| Package | Bulk |
| Technology | Schottky, Reverse Polarity |
| Mounting Type | Chassis Mount |
| Package / Case | Twin Tower |
| Product Status | Active |
| Base Product Number | MBR40035 |
| Diode Configuration | 1 Pair Common Anode |
| Supplier Device Package | Twin Tower |
| Current - Reverse Leakage @ Vr | 1 mA @ 35 V |
| Voltage - DC Reverse (Vr) (Max) | 35 V |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - Forward (Vf) (Max) @ If | 700 mV @ 200 A |
| Current - Average Rectified (Io) (per Diode) | 200A |
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