JAN1N5809/TR
Microchip Technology
型号:
JAN1N5809/TR
封装:
B, Axial
批次:
-
数据手册:
-
描述:
DIODE GEN PURP 100V 6A
购买数量:
库存 : 请查询
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产品信息
参数信息
用户指南
| Mfr | Microchip Technology |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Series | Military, MIL-PRF-19500/477 |
| Package | Tape & Reel (TR) |
| Technology | Standard |
| Mounting Type | Through Hole |
| Package / Case | B, Axial |
| Product Status | Active |
| Capacitance @ Vr, F | 60pF @ 10V, 1MHz |
| Supplier Device Package | B, Axial |
| Reverse Recovery Time (trr) | 30 ns |
| Current - Reverse Leakage @ Vr | 5 µA @ 100 V |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Current - Average Rectified (Io) | 6A |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 4 A |
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