JAN1N5615US

Microchip Technology

型号:

JAN1N5615US

封装:

D-5A

批次:

-

数据手册:

-

描述:

DIODE GEN PURP 200V 1A D-5A

购买数量:

库存 : 请查询

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产品信息

参数信息
用户指南
Mfr Microchip Technology
Speed Fast Recovery =< 500ns, > 200mA (Io)
Series Military, MIL-PRF-19500/429
Package Bulk
Technology Standard
Mounting Type Surface Mount
Package / Case SQ-MELF, A
Product Status Active
Base Product Number 1N5615
Capacitance @ Vr, F -
Supplier Device Package D-5A
Reverse Recovery Time (trr) 150 ns
Current - Reverse Leakage @ Vr 500 µA @ 200 V
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 1A
Operating Temperature - Junction -65°C ~ 200°C
Voltage - Forward (Vf) (Max) @ If 800 mV @ 3 A